Three Compact Active Baluns with High Phase/Amplitude Balance and Low Power in 65-nm CMOS for Transceiver Applications
Biao Deng, Mingjie Liu, Haiqiang Guo, Liguo Sun
Abstract
Biao Deng, Mingjie Liu, Haiqiang Guo, Liguo Sun
Abstract
Three types of 400M-1000MHz compact active baluns with high phase/amplitude balance and low power for transceiver applications are presented in this paper. Three architectures are single transistor balun, common-gate/common-source(CG-CS) balun and active current mirror balun. These baluns were fabricated by 65-nm CMOS technology. The measurement shows phase imbalance and amplitude imbalance are 180.78° /0.19dB, 178.3° /0.12dB and 178.7° /1.42dB at 650MHz, respectively. The power consumption is 4.56mW, 22.5mW and 13.67mW under 1-V power supply. Three baluns occupy 0.0256mm2, 0.024mm2 and 0.0184mm2 excluding pads.
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Three types of 400M-1000MHz compact active baluns with high phase/amplitude balance and low power for transceiver applications are presented in this paper. Three architectures are single transistor balun, common-gate/common-source(CG-CS) balun and active current mirror balun. These baluns were fabricated by 65-nm CMOS technology. The measurement shows phase imbalance and amplitude imbalance are 180.78° /0.19dB, 178.3° /0.12dB and 178.7° /1.42dB at 650MHz, respectively. The power consumption is 4.56mW, 22.5mW and 13.67mW under 1-V power supply. Three baluns occupy 0.0256mm2, 0.024mm2 and 0.0184mm2 excluding pads.
Key concepts: Balun, CMOS, Transceiver, Electrical engineering, Power (physics), Amplitude, Phase (matter), Transistor