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2011•Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIERequires access

Solutions for 22-nm node patterning using ArFi technology

Jo Finders, Mircea Dusa, Jan Mulkens, Yu Cao, Maryana Escalante

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Abstract

ArF immersion lithography will be the main candidate for lithography patterning at the 22nm node. For both logic and memory type applications, double patterning techniques have to be applied to reach design pitches well below 70nm. In the lithography this combines aggressive imaging at low k1 (0.28... 0.31) and aggressive absolute CDU requirements (approximately 6-10% of nominal CD) of 1.5..2nm 3σ. We will look into the lithography requirements to achieve such aggressive CDU numbers and will discuss solutions for achieving the required level of intra-field, inter-field, waferto- wafer and scanner-to-scanner CD variations

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What this paper is about

ArF immersion lithography will be the main candidate for lithography patterning at the 22nm node. For both logic and memory type applications, double patterning techniques have to be applied to reach design pitches well below 70nm. In the lithography this combines aggressive imaging at low k1 (0.28... 0.31) and aggressive absolute CDU requirements (approximately 6-10% of nominal CD) of 1.5..2nm 3σ. We will look into the lithography requirements to achieve such aggressive CDU numbers and will discuss solutions for achieving the required level of intra-field, inter-field, waferto- wafer and scanner-to-scanner CD variations

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OpenAlex reports 6 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

ArF immersion lithography will be the main candidate for lithography patterning at the 22nm node. For both logic and memory type applications, double patterning techniques have to be applied to reach design pitches well below 70nm. In the lithography this combines aggressive imaging at low k1 (0.28... 0.31) and aggressive absolute CDU requirements (approximately 6-10% of nominal CD) of 1.5..2nm 3σ. We will look into the lithography requirements to achieve such aggressive CDU numbers and will discuss solutions for achieving the required level of intra-field, inter-field, waferto- wafer and scanner-to-scanner CD variations

Key concepts: Immersion lithography, Lithography, Scanner, Multiple patterning, Next-generation lithography, Extreme ultraviolet lithography, Wafer, Node (physics)

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