Analysis of Silicon-on-Insulator based Planar Optical Waveguide

In SOI structures, a thin layer of crystalline silicon (Si) is grown on top of an insulating layer, most often silicon dioxide (SiO2). In particular, the huge refractive index difference between silicon and silicon dioxide gives SOI optical waveguides their distinctive optical features. By having such a large disparity between their refraction indices, electromagnetic fields may be tightly confined inside the silicon layer. This study suggests two distinct architectures for basic SOI-based waveguides and use the finite element approach to examine their performance at 1550[nm]. The suggested design can achieve a high birefringence of 0.9576, a low loss of 48.7773 dB, and a core power fraction of 76.79%. These numbers indicate that such waveguides have potential for expanded applications in modulators.