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22-GHz Bandwidth InGaAs/InP PIN Photodiodes

John E. Bowers, C.A. Burrus, R.S. Tucker

Abstract

Fast GaAs Schottky photodetectors for visible and near-infrared applications have been demonstrated [1], and high-speed PIN structures using InGaAs/InP for the emerging lightwave communications wavelengths (1.3–1.6 μm) have been reported [2,3]. We describe here the fabrication and characterization of an improved InGaAs/InP PIN photodiode with a measured 3 dB bandwidth of 22 GHz.

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Key concepts: Photodiode, Optoelectronics, Photodetector, Materials science, Fabrication, Indium gallium arsenide, Bandwidth (computing), Gallium arsenide