2022•2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT)Requires access
Improvement of G-Band Extended Interaction Klystron with High Power and Broad Bandwidth
Feng Zhang, Cunjun Ruan
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Abstract
In this paper, a high power and broad bandwidth extended interaction klystron (EIK) in G-band with multi-gap and mode overlap is proposed. We adopt larger cavity gap number than tradition research to achieve improvement of output characteristic. The high frequency characteristics and electric field distribution of modes in output cavities with different number of gaps are analyzed. Finally, the output cavity gap number is determined as 17. We optimize the structure and operating conditions to ensure the good stability of system. The PIC simulation results show that with increase of the frequency, the output cavity can realize mode overlap and the bandwidth is expanded to 1.56 GHz, which is much wider than our previous research. The PIC predicts 829 W output power, 46.2 dB gain and 17.8% efficiency. The simulation results indicate that the method and scheme we proposed can further improve the power and bandwidth of G-band EIK.