Simulation study of D-band extended interaction klystron amplifier
Dongrui Chen, Xiaotao Xu, Xuesong Yuan, Bin Wang, Hailong Li, Yong Yin, Yan Yang
Abstract
Dongrui Chen, Xiaotao Xu, Xuesong Yuan, Bin Wang, Hailong Li, Yong Yin, Yan Yang
Abstract
A D-band extended interaction klystron amplifier is investigated. A traveling wave structure is adopted as the input and output structure to improve the bandwidth. When the operating voltage is 22 kV, and current is 0.3 A. The simulation results show that a maximum output power of 450 W is obtained with the input power of 31.25 mW, the corresponding gain is 41.5 dB, efficiency is 6.8%, and a 3-dB bandwidth of about 600 MHz can be achieved. Our work provides a feasible method to the improvement of bandwidth for the extended interaction klystron amplifier.
OpenAlex reports 1 citations for this work. Citation counts describe recorded attention and do not establish research quality.
A contribution statement is not available in the OpenAlex record.
Method details are not available in the OpenAlex metadata.
Findings are not separately available in the OpenAlex metadata.
Limitations are not available in the OpenAlex metadata.
Application details are not available in the OpenAlex metadata.
A D-band extended interaction klystron amplifier is investigated. A traveling wave structure is adopted as the input and output structure to improve the bandwidth. When the operating voltage is 22 kV, and current is 0.3 A. The simulation results show that a maximum output power of 450 W is obtained with the input power of 31.25 mW, the corresponding gain is 41.5 dB, efficiency is 6.8%, and a 3-dB bandwidth of about 600 MHz can be achieved. Our work provides a feasible method to the improvement of bandwidth for the extended interaction klystron amplifier.
Key concepts: Klystron, Amplifier, Bandwidth (computing), Power bandwidth, Voltage, Electrical engineering, Physics, Power (physics)