Research on Parasitic Inductance Optimization of GaN Paralleled Cascode Power Module

GaN devices are more susceptible to parasitic inductance due to the high operating frequency and fast switching speed. Aimed at the depletion-mode GaN HEMT paralleled cascode power module for high-power applications, the influence of parasitic inductance on the performance of the devices in the power module is studied. Based on the influence of the current direction on the parasitic inductance, an optimization design method to reduce the parasitic inductance of the module is proposed. Considering the parasitic inductance introduced by the bonding wires, copper traces and copper pillars in the module, the optimization effect of the parasitic parameters of the module was verified by finite element analysis. The optimization effect of parasitic inductance optimization on the switching performance and power dissipation of the module is verified by simulation.