2022•2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)Requires access

GaAs pHEMT Damage under High Power MMW Injection

Mingwen Zhang, Chunguang Ma, Yuanci Gao, Yong Luo

Abstract

In this paper, the damage effect on GaAs pHEMT of high-power millimeter wave (MMW) is studied based on TCAD. The results show that the heat generated in device decreases with the increasing of frequency. However, the current is obviously higher under MMW injection than that under low frequency microwave injection. In addition, pHEMT shows different nonlinear characteristics under different frequency bands.

About this research paper

What this paper is about

Why it matters

A significance statement is not available in the OpenAlex record.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Key concepts: High-electron-mobility transistor, Extremely high frequency, Microwave, Materials science, Gallium arsenide, Optoelectronics, Radio frequency, Power (physics)