Novel training method for metal-oxide memristive synapse device to overcome trade-off between linearity and dynamic range

Synapse devices are essential for the hardware implementation of neuromorphic computing systems. However, it is difficult to realize ideal synapse devices because of issues such as nonlinear conductance change (linearity) and a small number of conductance states (dynamic range). In this study, the correlation between the linearity and dynamic range was investigated. Consequently, we found a trade-off relationship between the linearity and dynamic range and proposed a novel training method to overcome this trade-off.