Fabrication of Domain Wall based Magnetic Tunnel Junction Devices with Intrinsic Neuromorphic Functionality
Thomas M. Leonard, Samuel Liu, Harrison Jin, Joseph S. Friedman, Christopher H. Bennett, Jean Anne C. Incorvia
Abstract
Thomas M. Leonard, Samuel Liu, Harrison Jin, Joseph S. Friedman, Christopher H. Bennett, Jean Anne C. Incorvia
Abstract
We summarize our progress towards monolithic and analog neuromorphic computing utilizing domain wall-magnetic tunnel junction (DW-MTJ) devices. We have previously shown device performance for binary logic DW-MTJ devices. Here, we expand on that work by demonstrating neuromorphic functionality using shape-dependent tunability. We measure multi-weight synapses and stochastic neurons monolithically fabricated from the same material stack, enabling future integrated neuromorphic circuits. Future work includes fabrication of leaky integrate and fire (LIF) neurons to complete the library of neuromorphic functionality for a full DW-MTJ crossbar array capable of neuromorphic computing.
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We summarize our progress towards monolithic and analog neuromorphic computing utilizing domain wall-magnetic tunnel junction (DW-MTJ) devices. We have previously shown device performance for binary logic DW-MTJ devices. Here, we expand on that work by demonstrating neuromorphic functionality using shape-dependent tunability. We measure multi-weight synapses and stochastic neurons monolithically fabricated from the same material stack, enabling future integrated neuromorphic circuits. Future work includes fabrication of leaky integrate and fire (LIF) neurons to complete the library of neuromorphic functionality for a full DW-MTJ crossbar array capable of neuromorphic computing.
Key concepts: Neuromorphic engineering, Fabrication, Tunnel magnetoresistance, Crossbar switch, Domain (mathematical analysis), Computer science, Memristor, Stack (abstract data type)