On-wafer Hall-effect measurement system

A novel system capable of making on-wafer Hall-effect measurements of a patterned wafer during the fabrication sequence has been developed. A flat, powerful rare-earth magnet provides the magnetic field required. The wafer need only have van der Pauw patterns available for on-wafer measurement capability. Measurement of room temperature Hall mobility can quickly and easily be obtained, making possible detailed study of carrier concentration and mobility variations during wafer fabrication.