2000•physica status solidi (b)Requires access
Concentration and Mobilities of Holes and Electrons in Bi-2223 Thin Films from Analysis of Resistivity and Hall Effect Data
P. Sánchez, H. Sánchez
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Abstract
Hall effect and resistivity measurements in Bi-2223 thin films were carried out using the van der Pauw method. A two-band model involving holes and electrons was used to fit the experimental data. The analysis showed that the resistivity and Hall coefficient are mainly hole dependent. However, the electron contribution to the Hall coefficient cannot be ruled out.