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2015•2015 IEEE Magnetics Conference (INTERMAG)Requires access

A multi-level cell for STT-MRAM realized by capping layer adjustment

Min Wang, Shaolong Peng, Yue Zhang, Yue Zhang, D. Ravelosona, Wencong Zhao, Qinming Zhang

Open publisher page 2 citations

Abstract

Spin transfer torque magnetic random access memory (STT-MRAM) is recommended as one of the promising candidates for nonvolatile memory technologies. Compared with traditional memory technologies, STT-MRAM demonstrates low power consumption, fast access speed and infinite endurance, while the storage capacity reported so far has not been that large in contrast with SRAM or DRAM. Considering this, multi-level cells (MLC) based on more than one magnetic tunnel junctions (MTJ) have been proposed to further enhance the memory density.

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What this paper is about

Spin transfer torque magnetic random access memory (STT-MRAM) is recommended as one of the promising candidates for nonvolatile memory technologies. Compared with traditional memory technologies, STT-MRAM demonstrates low power consumption, fast access speed and infinite endurance, while the storage capacity reported so far has not been that large in contrast with SRAM or DRAM. Considering this, multi-level cells (MLC) based on more than one magnetic tunnel junctions (MTJ) have been proposed to further enhance the memory density.

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Available abstract

Spin transfer torque magnetic random access memory (STT-MRAM) is recommended as one of the promising candidates for nonvolatile memory technologies. Compared with traditional memory technologies, STT-MRAM demonstrates low power consumption, fast access speed and infinite endurance, while the storage capacity reported so far has not been that large in contrast with SRAM or DRAM. Considering this, multi-level cells (MLC) based on more than one magnetic tunnel junctions (MTJ) have been proposed to further enhance the memory density.

Key concepts: Magnetoresistive random-access memory, Universal memory, Static random-access memory, Dram, Spin-transfer torque, Non-volatile memory, Random access memory, Tunnel magnetoresistance

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