Study on flash memory device
Ou Wen
Abstract
Ou Wen
Abstract
Flash memories are electrically blocked erasable and programmable memories.With the increase in storage capacity,flash memories are expected to replace SRAM,DRAM and magnetic disks.The flash memory market is widened very quickly in these10years.With the scaling down of the feature size of flash device and the application in embedded systems and portable equip-ments,lower operating voltage and higher programming /erasing speed are required.To achieve these goals,much research work has been done in flash memory cell structure and processing technologies.This paper gives a overview to the flash memory structures and hope to be helpful in having a good understanding in programming mechanism and the future development in this field.
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Flash memories are electrically blocked erasable and programmable memories.With the increase in storage capacity,flash memories are expected to replace SRAM,DRAM and magnetic disks.The flash memory market is widened very quickly in these10years.With the scaling down of the feature size of flash device and the application in embedded systems and portable equip-ments,lower operating voltage and higher programming /erasing speed are required.To achieve these goals,much research work has been done in flash memory cell structure and processing technologies.This paper gives a overview to the flash memory structures and hope to be helpful in having a good understanding in programming mechanism and the future development in this field.
Key concepts: Universal memory, Flash memory, Flash (photography), Racetrack memory, Computer science, Non-volatile random-access memory, Static random-access memory, Flash memory emulator