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1987•Unpublished venueRequires access

O the Growth of (100) Gallium-Arsenide and (100) Indium-Arsenide by Molecular Beam Epitaxy.

S. M. Newstead

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Key concepts: Gallium arsenide, Molecular beam epitaxy, Indium arsenide, Indium, Arsenide, Materials science, Epitaxy, Optoelectronics

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O the Growth of (100) Gallium-Arsenide and (100) Indium-Arsenide by Molecular Beam Epitaxy. — Research Paper | ScholarLens