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Gallium ARSENIDE/ALUMINUM(X)-GALLIUM(1-X)ARSENIDE Quantum Well Lasers Grown on Gallium Arsenide and Silicon by Molecular Beam Epitaxy.

Howard Zehua Chen

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Key concepts: Gallium arsenide, Gallium, Molecular beam epitaxy, Silicon, Materials science, Arsenide, Optoelectronics, Epitaxy

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Gallium ARSENIDE/ALUMINUM(X)-GALLIUM(1-X)ARSENIDE Quantum Well Lasers Grown on Gallium Arsenide and Silicon by Molecular Beam Epitaxy. — Research Paper | ScholarLens