Ling-Yu Lee, Yunshan Wang, Huei Wang
Abstract
This paper presents a 25-31 GHz LNA using 0.15-μm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process. The LNA exhibits a measured small signal gain of 11.3-14.3 dB from 22 to 34 GHz with S11222including all RF and dc pads.
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This paper presents a 25-31 GHz LNA using 0.15-μm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process. The LNA exhibits a measured small signal gain of 11.3-14.3 dB from 22 to 34 GHz with S11222including all RF and dc pads.
Key concepts: High-electron-mobility transistor, Gallium arsenide, Noise figure, Electrical engineering, Optoelectronics, Transistor, Materials science, Chip