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2021•International Journal of Numerical Modelling Electronic Networks Devices and FieldsRequires access

Characterization of AlGaN / GaN based HEMT for low noise and high frequency application

Shashank Kumar Dubey, Meena Mishra, Aminul Islam

Open publisher page 36 citations

Abstract

Abstract This article presents a detailed study on AlGaN/GaN based HEMT for DC (such as ID − VDS, ID − VGS and gm), RF (such as cut off frequency, fT and maximum oscillation frequency, fMAX) and noise parameters (such as minimum noise figure (NFmin), noise resistance (Rn) and optimum reflection coefficient (Гopt)). AlGaN/GaN based HEMT having gate length 250 nm and 500 nm have been simulated and verified on the Silvaco TCAD tool.

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What this paper is about

Abstract This article presents a detailed study on AlGaN/GaN based HEMT for DC (such as ID − VDS, ID − VGS and gm), RF (such as cut off frequency, fT and maximum oscillation frequency, fMAX) and noise parameters (such as minimum noise figure (NFmin), noise resistance (Rn) and optimum reflection coefficient (Гopt)). AlGaN/GaN based HEMT having gate length 250 nm and 500 nm have been simulated and verified on the Silvaco TCAD tool.

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OpenAlex reports 36 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

Abstract This article presents a detailed study on AlGaN/GaN based HEMT for DC (such as ID − VDS, ID − VGS and gm), RF (such as cut off frequency, fT and maximum oscillation frequency, fMAX) and noise parameters (such as minimum noise figure (NFmin), noise resistance (Rn) and optimum reflection coefficient (Гopt)). AlGaN/GaN based HEMT having gate length 250 nm and 500 nm have been simulated and verified on the Silvaco TCAD tool.

Key concepts: High-electron-mobility transistor, Noise (video), Oscillation (cell signaling), Noise figure, Materials science, Optoelectronics, Electrical engineering, Transistor

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