Xiaotian Chen, Yize Wang, Yuan Wang
Abstract
To study the electrostatic discharge (ESD) characteristics of the full-depleted silicon-on-isolation (FD-SOI) device, some ESD structures are fabricated in a 22-nm FD-SOI process. The DC and TLP experimental testing have been fulfilled and investigated.
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To study the electrostatic discharge (ESD) characteristics of the full-depleted silicon-on-isolation (FD-SOI) device, some ESD structures are fabricated in a 22-nm FD-SOI process. The DC and TLP experimental testing have been fulfilled and investigated.
Key concepts: Silicon on insulator, Electrostatic discharge, Materials science, Optoelectronics, Silicon, Process (computing), Electronic engineering, Electrical engineering