RC-GID IGBT – A novel reverse-conducting IGBT with a gate voltage independent diode characteristic and low power losses

In this paper, a new RC IGBT concept is proposed. By integrating Schottky contacts between the MOS cells, a permanent electron path is created. As a result, the emitter efficiency of the MOS cell in diode mode decreases significantly, and is mostly independent of the gate-emitter voltage. The characteristics of the RC-GID IGBT in diode mode are set by a separate diode area. With the novel RC IGBT concept, a much higher integration of the diode into the IGBT area can be achieved. Hereby, operation with a conventional gate drive is allowed, moreover, the reverse-recovery charge in diode operation mode is as low as in state-of-the-art freewheeling diodes.