Influence of Anti-parallel Diode Characteristics on Gate Drive during IGBT Turn-on Transient

IGBT (Insulated Gate Bipolar Transistor) is a widely used semiconductor device in the field of power electronics, commonly used in high-power circuits such as AC variable frequency speed regulation, inverters, and DC transmission. The switching transient of IGBT is influenced by the gate driving strategy and the characteristics of anti-parallel diodes. This paper mainly analyzes the characteristics of IGBT anti-parallel diodes and the common effects of gate drive strategies on the reverse recovery process. The experimental data shows that not only should appropriate driving strategies be selected based on the characteristics of IGBT to suppress the reverse recovery process, but also the characteristics and working conditions of anti-parallel diodes should be taken into account. Only by matching the characteristics of IGBT and antiparallel diode simultaneously with the driving strategy and adjusting it according to working conditions can the normal operation of the circuit be ensured, and losses, stresses, and spikes be minimized as much as possible.