The thickness of the surface layer of porous silicon
V.М. Yurov, Е. Н. Еремин, С.А. Гученко, T. K. Zhanabergenov
Abstract
V.М. Yurov, Е. Н. Еремин, С.А. Гученко, T. K. Zhanabergenov
Abstract
For the first time, the thickness of the surface layer of porous silicon was determined. Monocrystalline silicon has a layer thickness of about 2 nm. This thickness can be experimentally determined using sliding x-rays in the mode of total internal reflection. The d(I)Si layer of atomically smooth single-crystal silicon is a nanostructure. The number of silicon particles in the monolayer is n=d(I)Si/a ≈ 4. It is shown that, starting from 80% porosity, silicon, by its properties of the d(II)Si layer, goes beyond the Gleiter nanostructure.
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For the first time, the thickness of the surface layer of porous silicon was determined. Monocrystalline silicon has a layer thickness of about 2 nm. This thickness can be experimentally determined using sliding x-rays in the mode of total internal reflection. The d(I)Si layer of atomically smooth single-crystal silicon is a nanostructure. The number of silicon particles in the monolayer is n=d(I)Si/a ≈ 4. It is shown that, starting from 80% porosity, silicon, by its properties of the d(II)Si layer, goes beyond the Gleiter nanostructure.
Key concepts: Monocrystalline silicon, Silicon, Materials science, Porous silicon, Layer (electronics), Monolayer, Nanostructure, Nanocrystalline silicon