Optimization of the GTEM Cell Resistive Network
Binwen Wang, Tingyong Jiang, Zhen Liu, Hui Ning, Lei Shi
Abstract
Binwen Wang, Tingyong Jiang, Zhen Liu, Hui Ning, Lei Shi
Abstract
The original resistive network of the introduced ETS-GTEM5411 cell with the size of 5.4 m×2.7 m×2.2 m (L×W×H) presents an inferior absorption performance at low frequencies. In this paper, a fan-shaped resistive network is proposed. Compared with the original resistive network, the proposed resistive network brings an improvement of about 10 dB to the absorption performance of the GTEM cell, over a frequency range less than 0.1 GHz, without considering the pyramid absorbers. And the upper limit frequency of the return loss below -20 dB reaches to 0.08 GHz. The simulated results show that the proposed resistive network is effective for GTEM cells of different sizes.
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The original resistive network of the introduced ETS-GTEM5411 cell with the size of 5.4 m×2.7 m×2.2 m (L×W×H) presents an inferior absorption performance at low frequencies. In this paper, a fan-shaped resistive network is proposed. Compared with the original resistive network, the proposed resistive network brings an improvement of about 10 dB to the absorption performance of the GTEM cell, over a frequency range less than 0.1 GHz, without considering the pyramid absorbers. And the upper limit frequency of the return loss below -20 dB reaches to 0.08 GHz. The simulated results show that the proposed resistive network is effective for GTEM cells of different sizes.
Key concepts: Resistive touchscreen, Absorption (acoustics), Electronic engineering, Limit (mathematics), Return loss, Materials science, Optoelectronics, Electrical engineering