A Thermalized Bias Circuit for Wider Operating Temperature Range in Bolometric Infrared Imagers

This letter presents a device for biasing bolometric infrared imaging sensors to increase the operating temperature range and enhance performance. It addresses the market's need for uncooled readout circuits that are easier to use. Here, we propose an integrated biasing system capable of managing the bolometric sensor's high-temperature dependence. We demonstrated that a biasing architecture using thermalized bolometers can automatically offset resistance variations in the active bolometer due to temperature variations of the focal plane array (FPA). Our research concerns a 12-μm pixel pitch QVGA matrix that operates at 50-mK noise equivalent temperature difference (NETD).