AC‐coupled gate driver with gate current switch under single power supply for normally‐off SiC JFET
Kozo Sakamoto, Natsuki Yokoyama, Hiroshi Hozoji
Abstract
Kozo Sakamoto, Natsuki Yokoyama, Hiroshi Hozoji
Abstract
Theoretically, normally‐off silicon carbide (SiC) junction field‐effect transistors (JFETs) do not require a negative gate voltage supply because they are in an off‐state when the gate–source voltage is 0 V. However, most gate drivers for normally‐off SiC JFETs require not only a positive power supply for turning on the JFET but also a negative power supply for turning it off and maintaining a negative gate–source voltage to suppress a false turn‐on power loss caused by crosstalk during fast switching. Therefore, modifications of gate drivers increase complications and costs. In this study, a normally‐off SiC JFET gate driver, which can be realized using a simple circuit configuration with a single power supply, is proposed. To minimize undesirable crosstalk, the gate‐source voltage of the JFET is driven to a negative value and retained in the state for a long period of time. © 2020 Institute of Electrical Engineers of Japan. Published by Wiley Periodicals LLC.
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Theoretically, normally‐off silicon carbide (SiC) junction field‐effect transistors (JFETs) do not require a negative gate voltage supply because they are in an off‐state when the gate–source voltage is 0 V. However, most gate drivers for normally‐off SiC JFETs require not only a positive power supply for turning on the JFET but also a negative power supply for turning it off and maintaining a negative gate–source voltage to suppress a false turn‐on power loss caused by crosstalk during fast switching. Therefore, modifications of gate drivers increase complications and costs. In this study, a normally‐off SiC JFET gate driver, which can be realized using a simple circuit configuration with a single power supply, is proposed. To minimize undesirable crosstalk, the gate‐source voltage of the JFET is driven to a negative value and retained in the state for a long period of time. © 2020 Institute of Electrical Engineers of Japan. Published by Wiley Periodicals LLC.
Key concepts: JFET, Electrical engineering, Gate driver, Voltage, Silicon carbide, Materials science, Transistor, Crosstalk