A Short-Channel GaAs FET Fabricated Like a MESFET, But Operating Like a JFET

Normally-on GaAs field effect transistors (FETs) having 1 µm gate lengths and 4 µm channel lengths were fabricated in structures grown by molecular beam epitaxy (MBE). The unique part of this device is the very thin p +/n + structure used to replace the conventional Schottky barriers. The device fabrication procedure is identical to that of a Schottky barrier FET (MESFET), but the devices exhibit characteristics similar to that of a junction field effect transistor (JFET). This new device, the “camel diode gate FET”, is expected to have applications in both logic and power devices.