1999•Unpublished venueRequires access

Surface morphology, interfacial structures and optical properties of (111)-oriented indium arsenide antimonide semiconductor films and multi-quantum wells prepared by metalorganic vapor phase epitaxy

Scott Christopher Theiring

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Key concepts: Indium antimonide, Antimonide, Indium arsenide, Epitaxy, Quantum well, Materials science, Optoelectronics, Gallium arsenide

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Surface morphology, interfacial structures and optical properties of (111)-oriented indium arsenide antimonide semiconductor films and multi-quantum wells prepared by metalorganic vapor phase epitaxy — Research Paper | ScholarLens