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Improved Photoluminescence of InGaN Quantum Wells Grown on Nano-Patterned AGOG Sapphire Substrate by Metalorganic Vapor Phase Epitaxy

Yik‐Khoon Ee, Ronald A. Arif, Nelson Tansu, Hongwei Li, Helen M. Chan, Richard P. Vinci, Pavel Čapek, Naveen K. Jha, Volkmar Dierolf

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Abstract

Metalorganic vapor phase epitaxy of InGaN quantum wells on GaN template grown on nano-patterned AGOG sapphire substrate leads to improved luminescence intensity by 1.89-2.21-times, presumably due to the reduced defect density.

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What this paper is about

Metalorganic vapor phase epitaxy of InGaN quantum wells on GaN template grown on nano-patterned AGOG sapphire substrate leads to improved luminescence intensity by 1.89-2.21-times, presumably due to the reduced defect density.

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Available abstract

Metalorganic vapor phase epitaxy of InGaN quantum wells on GaN template grown on nano-patterned AGOG sapphire substrate leads to improved luminescence intensity by 1.89-2.21-times, presumably due to the reduced defect density.

Key concepts: Epitaxy, Sapphire, Materials science, Photoluminescence, Optoelectronics, Vapor phase, Quantum well, Substrate (aquarium)

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