ScholarLens Back to search
2020•SID Symposium Digest of Technical PapersRequires access

61‐3: Distinguished Paper: Vertically Integrated, Double‐Stack Oxide‐TFT Layers for High‐Resolution AMOLED Backplane

Suhui Lee, Yuanfeng Chen, Jeonggi Kim, Jin Jang

Open publisher page 0 citations

Abstract

We developed a novel vertically integrated, double stack oxide thin‐film transistor (TFT) backplane for high resolution organic light‐emitting diode (OLED) displays. The 1st TFT layer is bulk‐accumulation mode and 2nd TFT layer is a single gate with back‐channel etched structure. The extracted mobilities and threshold voltages are higher than 10 cm 2 /Vs and 0~1V, respectively. Both TFTs are found to be extremely stable under the bias and temperature stress. The gate driver with width of 530 µm and a pitch of 18.6 µm was developed exhibiting well shifted signal up to the last stage of 900‐stages without output degradation, which could be used for 1360 ppi, TFT backplane.

About this research paper

What this paper is about

We developed a novel vertically integrated, double stack oxide thin‐film transistor (TFT) backplane for high resolution organic light‐emitting diode (OLED) displays. The 1st TFT layer is bulk‐accumulation mode and 2nd TFT layer is a single gate with back‐channel etched structure. The extracted mobilities and threshold voltages are higher than 10 cm 2 /Vs and 0~1V, respectively. Both TFTs are found to be extremely stable under the bias and temperature stress. The gate driver with width of 530 µm and a pitch of 18.6 µm was developed exhibiting well shifted signal up to the last stage of 900‐stages without output degradation, which could be used for 1360 ppi, TFT backplane.

Why it matters

A significance statement is not available in the OpenAlex record.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

We developed a novel vertically integrated, double stack oxide thin‐film transistor (TFT) backplane for high resolution organic light‐emitting diode (OLED) displays. The 1st TFT layer is bulk‐accumulation mode and 2nd TFT layer is a single gate with back‐channel etched structure. The extracted mobilities and threshold voltages are higher than 10 cm 2 /Vs and 0~1V, respectively. Both TFTs are found to be extremely stable under the bias and temperature stress. The gate driver with width of 530 µm and a pitch of 18.6 µm was developed exhibiting well shifted signal up to the last stage of 900‐stages without output degradation, which could be used for 1360 ppi, TFT backplane.

Key concepts: Thin-film transistor, Backplane, AMOLED, Materials science, OLED, Optoelectronics, Stack (abstract data type), Transistor

Related papers

Related paper 1Related paper 2
Back to paper searchBrowse research topicsOriginal source
61‐3: Distinguished Paper: Vertically Integrated, Double‐Stack Oxide‐TFT Layers for High‐Resolution AMOLED Backplane — Research Paper | ScholarLens