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2014•Journal of Crystal GrowthRequires access

Improved breakdown characteristics of monolithically integrated III-nitride HEMT–LED devices using carbon doping

Chao Liu, Zhaojun Liu, Tongde Huang, Jun Ma, Kei May Lau

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Key concepts: High-electron-mobility transistor, Optoelectronics, Light-emitting diode, Breakdown voltage, Materials science, Doping, Diode, Nitride

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