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2020•Unpublished venueRequires access

A Hybrid Three-Phase Seven-Level CHB Inverter with a Novel Modulation Scheme

Zhansen Akhmetov, Chushan Li, Wuhua Li, Alexander Ruderman

Open publisher page 6 citations

Abstract

This paper describes the operation principle and advantages of the hybrid three-phase seven-level cascaded Hbridge (CHB) inverter. The hybrid inverter consisted of SiIGBTs and SiC-MOSFETs can be used for high frequency modulation due to considerably low switching losses of SiCMOSFETs. The Si-IGBTs are switched under fundamental frequency to minimize the switching losses. The lower power loss and low total harmonic distortion (THD) makes the inverter attractive for industry. Relatively low cost is reached, since only one third of the modules are SiC-MOSFETs, while others are cheaper Si-IGBTs. The hybrid CHB inverter can be used in both high and low speed motor drives. The conducted experiments verify its application in the industry.

About this research paper

What this paper is about

This paper describes the operation principle and advantages of the hybrid three-phase seven-level cascaded Hbridge (CHB) inverter. The hybrid inverter consisted of SiIGBTs and SiC-MOSFETs can be used for high frequency modulation due to considerably low switching losses of SiCMOSFETs. The Si-IGBTs are switched under fundamental frequency to minimize the switching losses. The lower power loss and low total harmonic distortion (THD) makes the inverter attractive for industry. Relatively low cost is reached, since only one third of the modules are SiC-MOSFETs, while others are cheaper Si-IGBTs. The hybrid CHB inverter can be used in both high and low speed motor drives. The conducted experiments verify its application in the industry.

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Available abstract

This paper describes the operation principle and advantages of the hybrid three-phase seven-level cascaded Hbridge (CHB) inverter. The hybrid inverter consisted of SiIGBTs and SiC-MOSFETs can be used for high frequency modulation due to considerably low switching losses of SiCMOSFETs. The Si-IGBTs are switched under fundamental frequency to minimize the switching losses. The lower power loss and low total harmonic distortion (THD) makes the inverter attractive for industry. Relatively low cost is reached, since only one third of the modules are SiC-MOSFETs, while others are cheaper Si-IGBTs. The hybrid CHB inverter can be used in both high and low speed motor drives. The conducted experiments verify its application in the industry.

Key concepts: Inverter, Total harmonic distortion, Electronic engineering, Modulation (music), Power (physics), Power semiconductor device, Distortion (music), Switching frequency

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