1990•Electrical EngineeringRequires access

Qualification of IGBT's and SIRET for high frequency inverter application

G. Bober, Klemens Heumann, G. Papp

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Key concepts: Insulated-gate bipolar transistor, Inverter, Bipolar junction transistor, Transistor, Power (physics), Power semiconductor device, Electrical engineering, Pulse-width modulation

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Qualification of IGBT's and SIRET for high frequency inverter application — Research Paper | ScholarLens