MOSFET threshold voltage modelling and parameters optimisation of new ion implant-based subthreshold device

This paper introduces a new doping profile for devices to be used in subthreshold circuits. Results show that the optimised device with the proposed doping profile offers higher ON current in the subthreshold region. In this paper, threshold voltage modelling has been performed and a comparative analysis is presented between super-threshold and sub-threshold devices. We have also analysed the subthreshold swing characteristics of the device with the proposed doping profiles. Our analysis shows that better subthreshold swing and less threshold voltage variation can be achieved using our new doping profile.