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Properties of the Nitrogen Isoelectronic Trap in the Group-Iii Semiconductor Alloys Gallium-Arsenide - and Indium-Gallium

Donald R. Scifres

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Key concepts: Gallium arsenide, Gallium, Indium, Semiconductor, Nitrogen, Group (periodic table), Materials science, Atomic physics

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Properties of the Nitrogen Isoelectronic Trap in the Group-Iii Semiconductor Alloys Gallium-Arsenide - and Indium-Gallium — Research Paper | ScholarLens