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Properties of the Nitrogen Isoelectronic Trap in the Group-Iii-v Semiconductor Alloys Gallium-Arsenide-Phosphide and Indium-Gallium-Phosphide

Donald R. Scifres

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Key concepts: Gallium phosphide, Indium phosphide, Gallium arsenide, Gallium, Indium, Semiconductor, Nitrogen, Materials science

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Properties of the Nitrogen Isoelectronic Trap in the Group-Iii-v Semiconductor Alloys Gallium-Arsenide-Phosphide and Indium-Gallium-Phosphide — Research Paper | ScholarLens