The Power Density, Efficiency and EMC Improvement Based on All-SiC Power Devices in the Power Module for Ballast Water Management System
Zhijun Li, Tiancong Shao, Trillion Q. Zheng, Hong Li, Bo Huang
Abstract
Zhijun Li, Tiancong Shao, Trillion Q. Zheng, Hong Li, Bo Huang
Abstract
The contribution of SiC power devices to the whole power conversion system still lacks comparative analysis verification. This paper experimentally investigates a high-performance All-SiC power module to provide solid evidence for the excellent performance of SiC semiconductor in the high power electrical energy conversion. The All-SiC power module in this paper, featured with high-efficiency and high-power-density, is intended for the power supply rectifier of electrolysis inactivation in the Ballast Water Management System (BWMS). Conventional All-Si power module for BWMS rectifier used low switching frequency Si IGBTs as their power devices, resulting in low power density and limited efficiency. This paper schemes the technical approach based on fast switching SiC MOSFETs, and then experimentally investigates the performance of it. Finally, the comparison between the traditional All-SiC and All-SiC power modules verifies the technical advantages by using SiC MOSFETs as the power devices.
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The contribution of SiC power devices to the whole power conversion system still lacks comparative analysis verification. This paper experimentally investigates a high-performance All-SiC power module to provide solid evidence for the excellent performance of SiC semiconductor in the high power electrical energy conversion. The All-SiC power module in this paper, featured with high-efficiency and high-power-density, is intended for the power supply rectifier of electrolysis inactivation in the Ballast Water Management System (BWMS). Conventional All-Si power module for BWMS rectifier used low switching frequency Si IGBTs as their power devices, resulting in low power density and limited efficiency. This paper schemes the technical approach based on fast switching SiC MOSFETs, and then experimentally investigates the performance of it. Finally, the comparison between the traditional All-SiC and All-SiC power modules verifies the technical advantages by using SiC MOSFETs as the power devices.
Key concepts: Power module, Power density, Power semiconductor device, Power (physics), Ballast, Switched-mode power supply, Rectifier (neural networks), Electrical engineering