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2015•Unpublished venueRequires access

Development of packaging technologies for SiC power module

Chun-Kai Liu, Yu-Lin Chao, Wei Li, Chih-Ming Tzeng, Kuo‐Shu Kao, Jing‐Yao Chang, Rong-Chang Fang

Open publisher page 6 citations

Abstract

In recent years, SiC power semiconductor devices are emerging as alternatives that outperform Si devices by reduce power loss and high operation temperature (>200°C). However, commercial packaging technologies for Si devices are within limited operation temperature (<150°C). The development of packaging technologies for SiC power module is a critical issue. In this paper, the full SiC power module (SiC MOSFET+ SiC Schottky diode) is developed. Thermal, thermomechanical and electrical characteristics of power module are analyzed. For increase reliability, Cu-Al heavy wire bonding and die bonding with high temperature solder are studied. Finally, the performance of full SiC power module is measured and compared with Si IGBT power module.

About this research paper

What this paper is about

In recent years, SiC power semiconductor devices are emerging as alternatives that outperform Si devices by reduce power loss and high operation temperature (>200°C). However, commercial packaging technologies for Si devices are within limited operation temperature (<150°C). The development of packaging technologies for SiC power module is a critical issue. In this paper, the full SiC power module (SiC MOSFET+ SiC Schottky diode) is developed. Thermal, thermomechanical and electrical characteristics of power module are analyzed. For increase reliability, Cu-Al heavy wire bonding and die bonding with high temperature solder are studied. Finally, the performance of full SiC power module is measured and compared with Si IGBT power module.

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OpenAlex reports 6 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

In recent years, SiC power semiconductor devices are emerging as alternatives that outperform Si devices by reduce power loss and high operation temperature (>200°C). However, commercial packaging technologies for Si devices are within limited operation temperature (<150°C). The development of packaging technologies for SiC power module is a critical issue. In this paper, the full SiC power module (SiC MOSFET+ SiC Schottky diode) is developed. Thermal, thermomechanical and electrical characteristics of power module are analyzed. For increase reliability, Cu-Al heavy wire bonding and die bonding with high temperature solder are studied. Finally, the performance of full SiC power module is measured and compared with Si IGBT power module.

Key concepts: Power module, Materials science, Reliability (semiconductor), Power semiconductor device, Insulated-gate bipolar transistor, Schottky diode, Wire bonding, Soldering

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