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2018•2018 International Conference on Advanced Computation and Telecommunication (ICACAT)Requires access

Performance Comparison of Amorphous-IGZO and Hydrogenated Silicon Based Thin Film Transistor

Shashi Kant Dargar, Viranjay Mohan Srivastava

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Abstract

Amorphous Hydrogenated Silicon (α-Si:H) has been a prevalent material in Thin Film Transistors (TFTs) since the inception of the technology. But due to their limited mobility they have been overhauled by alternative Amorphous Oxide Semiconductors (AOS). InGaZnO is one among them, which has variety of TFT applications. In this paper, simulation of two amorphous semiconductor TFTs have been carried out for analyzing their transport behavior and to compare the transport characteristics of the oxide TFTs. Simulation results reported that mobility have a high dependency on Urbach energy. Obtained maximum mobility 16 cm2/Vs from α-IGZO TFT is 73% higher than α-Si:H TFT. The results demonstrate the superiority of α-IGZO TFT mobility. The reported outcomes can advance the future oxide TFT Research and Development.

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What this paper is about

Amorphous Hydrogenated Silicon (α-Si:H) has been a prevalent material in Thin Film Transistors (TFTs) since the inception of the technology. But due to their limited mobility they have been overhauled by alternative Amorphous Oxide Semiconductors (AOS). InGaZnO is one among them, which has variety of TFT applications. In this paper, simulation of two amorphous semiconductor TFTs have been carried out for analyzing their transport behavior and to compare the transport characteristics of the oxide TFTs. Simulation results reported that mobility have a high dependency on Urbach energy. Obtained maximum mobility 16 cm2/Vs from α-IGZO TFT is 73% higher than α-Si:H TFT. The results demonstrate the superiority of α-IGZO TFT mobility. The reported outcomes can advance the future oxide TFT Research and Development.

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OpenAlex reports 6 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

Amorphous Hydrogenated Silicon (α-Si:H) has been a prevalent material in Thin Film Transistors (TFTs) since the inception of the technology. But due to their limited mobility they have been overhauled by alternative Amorphous Oxide Semiconductors (AOS). InGaZnO is one among them, which has variety of TFT applications. In this paper, simulation of two amorphous semiconductor TFTs have been carried out for analyzing their transport behavior and to compare the transport characteristics of the oxide TFTs. Simulation results reported that mobility have a high dependency on Urbach energy. Obtained maximum mobility 16 cm2/Vs from α-IGZO TFT is 73% higher than α-Si:H TFT. The results demonstrate the superiority of α-IGZO TFT mobility. The reported outcomes can advance the future oxide TFT Research and Development.

Key concepts: Thin-film transistor, Oxide thin-film transistor, Amorphous silicon, Materials science, Amorphous solid, Transistor, Optoelectronics, Amorphous semiconductors

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