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Surfactants control of surface process in gallium indium phosphide and gallium arsenide epitaxial layers grown by organometallic vapor phase epitaxy

Sung Won Jun

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Key concepts: Epitaxy, Gallium arsenide, Gallium, Indium phosphide, Materials science, Indium, Vapor phase, Optoelectronics

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Surfactants control of surface process in gallium indium phosphide and gallium arsenide epitaxial layers grown by organometallic vapor phase epitaxy — Research Paper | ScholarLens