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ChemInform Abstract: SUBSTRATE ORIENTATION DEPENDENCE OF GROWTH RATE OF INDIUM GALLIUM ARSENIDE/INDIUM PHOSPHIDE GROWN BY LIQUID PHASE EPITAXY

Kensuke Nakajima, Kenzo Akita

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Abstract

Abstract Die Wachstumsgeschwindigkeit von In1‐xGaxAs an der (100)‐Fläche von InP ist größer als an der (111)B‐Fläche.

About this research paper

What this paper is about

Abstract Die Wachstumsgeschwindigkeit von In1‐xGaxAs an der (100)‐Fläche von InP ist größer als an der (111)B‐Fläche.

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Available abstract

Abstract Die Wachstumsgeschwindigkeit von In1‐xGaxAs an der (100)‐Fläche von InP ist größer als an der (111)B‐Fläche.

Key concepts: Indium phosphide, Indium, Epitaxy, Gallium arsenide, Liquid phase, Materials science, Substrate (aquarium), Indium arsenide

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ChemInform Abstract: SUBSTRATE ORIENTATION DEPENDENCE OF GROWTH RATE OF INDIUM GALLIUM ARSENIDE/INDIUM PHOSPHIDE GROWN BY LIQUID PHASE EPITAXY — Research Paper | ScholarLens