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A low-loss high-speed switching device: The 2500-V 300-A static induction thyristor

Jun‐ichi Nishizawa, K. Muraoka, Y. Kawamura, T. Tamamushi

Open publisher page 22 citations

Abstract

An anode-emitter shorted-type 2500-V 300-A buried-gate static induction (SI) thyristor was fabricated and resulted in a very-high-speed turn-on time of 2.0 µs and a turn-off time of 3.1 µs, both at 1000 A, and in very low-loss performance due to the reduction of the tailing current. The switching loss and the conduction loss of the high-power SI thyristor is for the first time evaluated in this paper. Snubber-circuitless operation is demonstrated for the first time for the high-power SI thyristor.

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What this paper is about

An anode-emitter shorted-type 2500-V 300-A buried-gate static induction (SI) thyristor was fabricated and resulted in a very-high-speed turn-on time of 2.0 µs and a turn-off time of 3.1 µs, both at 1000 A, and in very low-loss performance due to the reduction of the tailing current. The switching loss and the conduction loss of the high-power SI thyristor is for the first time evaluated in this paper. Snubber-circuitless operation is demonstrated for the first time for the high-power SI thyristor.

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OpenAlex reports 22 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

An anode-emitter shorted-type 2500-V 300-A buried-gate static induction (SI) thyristor was fabricated and resulted in a very-high-speed turn-on time of 2.0 µs and a turn-off time of 3.1 µs, both at 1000 A, and in very low-loss performance due to the reduction of the tailing current. The switching loss and the conduction loss of the high-power SI thyristor is for the first time evaluated in this paper. Snubber-circuitless operation is demonstrated for the first time for the high-power SI thyristor.

Key concepts: Thyristor, Static induction thyristor, Snubber, Integrated gate-commutated thyristor, MOS-controlled thyristor, Gate turn-off thyristor, Electrical engineering, Materials science

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