Electrothermal Study on Resistive Random Access Memory (RRAM) Arrays
Da‐Wei Wang, Wen‐Yan Yin, Wenchao Chen, Wen‐Sheng Zhao
Abstract
Da‐Wei Wang, Wen‐Yan Yin, Wenchao Chen, Wen‐Sheng Zhao
Abstract
In this paper, the electrothermal performance of large-scale resistive random access memory (RRAM) array is studied using an in-house developed parallel simulator. To realize the capability for parallel simulation, a high-performance computing scheme based on the mixed finite element method and finite volume method combining the domain decomposition method and J parallel adaptive unstructured mesh applications infrastructure is adopted. The performances, including accuracy and scalability of the in-house developed parallel simulator are accessed first. And then, the electrothermal characteristics of large-scale RRAM array are investigated using the simulator.
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In this paper, the electrothermal performance of large-scale resistive random access memory (RRAM) array is studied using an in-house developed parallel simulator. To realize the capability for parallel simulation, a high-performance computing scheme based on the mixed finite element method and finite volume method combining the domain decomposition method and J parallel adaptive unstructured mesh applications infrastructure is adopted. The performances, including accuracy and scalability of the in-house developed parallel simulator are accessed first. And then, the electrothermal characteristics of large-scale RRAM array are investigated using the simulator.
Key concepts: Resistive random-access memory, Scalability, Computer science, Domain decomposition methods, Computational science, Random access, Finite element method, Domain (mathematical analysis)