Yasuo Takahashi, Masashi Arita
Abstract
Structural changes of a ReRAM (resistive random access memory) during the resistive switching was successfully observed for the first time by in-situ TEM. We succeeded the observation for the three kinds of ReRAM devices with different ReRAM materials.
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Structural changes of a ReRAM (resistive random access memory) during the resistive switching was successfully observed for the first time by in-situ TEM. We succeeded the observation for the three kinds of ReRAM devices with different ReRAM materials.
Key concepts: Resistive random-access memory, In situ, Materials science, Random access memory, Resistive touchscreen, Optoelectronics, Electrode, Computer science