2019•Japanese Journal of Applied PhysicsRequires access

Piezoresistive effect and strain gauge application of β -Ga 2 O 3

Yu-Yao Lin, Shin-Sheng Huang, Mau-Phon Houng, Yuan-Ta Hsieh, Ying‐Zong Juang, Jian V. Li

Abstract

Abstract We report observation of the piezoresistive effect of β -Ga 2 O 3 and investigate its application for strain gauge sensors. Ti/Au ohmic contacts are fabricated on commercially procured β -Ga 2 O 3 materials. We employ the transfer length measurement pattern to remove the influence of contact resistance on the resistance measurement of β -Ga 2 O 3 samples, especially when measuring the relatively small piezoresistance change due to strain. A gauge factor of −5.8 ± 0.1 is measured from a Ti/Au- β -Ga 2 O 3 -Ti/Au structure under tensile uniaxial stress in the [010] direction at room temperature.

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Key concepts: Gauge factor, Piezoresistive effect, Ohmic contact, Strain gauge, Materials science, Strain (injury), Tensile strain, Stress (linguistics)