Lei Zhao, Xinsheng Liu, Bin Miao, Zhiqi Gu, Jin Wang, Huoxiang Peng, Jian Zhang, Bin Zeng, Jiadong Li
Abstract
In this study, we propose a differential extended gate (DEG)-AlGaN/GaN high electron mobility transistor (HEMT) sensor to detect ionic pollutants in solution.
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In this study, we propose a differential extended gate (DEG)-AlGaN/GaN high electron mobility transistor (HEMT) sensor to detect ionic pollutants in solution.
Key concepts: High-electron-mobility transistor, Ionic bonding, Optoelectronics, Pollutant, Transistor, Materials science, Differential (mechanical device), Chemistry