A Novel High-k LDMOS with Triangular Trench Field Plate

This paper presents a High-k Lateral Diffused Metal Oxide Semiconductor (HK-LDMOS) with triangular trench field plate (TTFP-HK-LDMOS). The main feature of TTFP-HK-LDMOS is introducing two triangular trench field plate at both ends of the drift region. The distribution of surface electric field can be modulated by the triangular trench field plate, so that the breakdown voltage can be improved. The simulation results show that the breakdown voltage of TTFP-HK-LDMOS can reach 372V. Compare with HKLDMOS breakdown voltage, TTFP-HK-LDMOS breakdown voltage increases 28.3%. Meanwhile, the TTFP-HK-LDMOS improved figure of merits which is 2.2 times in compared with HK-LDMOS.