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2012•Superlattices and MicrostructuresRequires access

Breakdown voltage improvement of LDMOSs by charge balancing: An inserted P-layer in trench oxide (IPT-LDMOS)

Ali A. Orouji, Mahsa Mehrad

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Key concepts: LDMOS, Breakdown voltage, Trench, Materials science, Layer (electronics), Voltage, Electric field, Doping

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Breakdown voltage improvement of LDMOSs by charge balancing: An inserted P-layer in trench oxide (IPT-LDMOS) — Research Paper | ScholarLens