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2008•Journal of SemiconductorsRequires access

A Novel Equivalent Circuit Model of GaAs PIN Diodes

Wu Rufei, Haiying Zhang, Yin Junjian, Xiao Li, Huidong Liu, Liu Xunchun

Open publisher page 7 citations

Abstract

A novel equivalent circuit model for a GaAs PIN diode is presented based on physical analysis.The diode is divided into three parts:the p+n- junction,the i-layer,and the n-n+ junction,which are modeled separately.The entire model is then formed by combining the three sub-models.In this way,the model’s accuracy is greatly enhanced.Furthermore,the corresponding parameter extraction method is easy,requiring no rigorous experiment or measurement.To validate this newly proposed model,fifteen groups of diodes are fabricated.Measurement shows that the model exactly represents behavior of GaAs PIN diodes under both forward and reversely biased conditions.

About this research paper

What this paper is about

A novel equivalent circuit model for a GaAs PIN diode is presented based on physical analysis.The diode is divided into three parts:the p+n- junction,the i-layer,and the n-n+ junction,which are modeled separately.The entire model is then formed by combining the three sub-models.In this way,the model’s accuracy is greatly enhanced.Furthermore,the corresponding parameter extraction method is easy,requiring no rigorous experiment or measurement.To validate this newly proposed model,fifteen groups of diodes are fabricated.Measurement shows that the model exactly represents behavior of GaAs PIN diodes under both forward and reversely biased conditions.

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OpenAlex reports 7 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

A novel equivalent circuit model for a GaAs PIN diode is presented based on physical analysis.The diode is divided into three parts:the p+n- junction,the i-layer,and the n-n+ junction,which are modeled separately.The entire model is then formed by combining the three sub-models.In this way,the model’s accuracy is greatly enhanced.Furthermore,the corresponding parameter extraction method is easy,requiring no rigorous experiment or measurement.To validate this newly proposed model,fifteen groups of diodes are fabricated.Measurement shows that the model exactly represents behavior of GaAs PIN diodes under both forward and reversely biased conditions.

Key concepts: Diode, Equivalent circuit, PIN diode, Optoelectronics, Materials science, Gallium arsenide, Layer (electronics), Electronic engineering

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