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2016•Unpublished venueRequires access

An efficient spectral element method for the analysis of PIN diodes

Huaguang Bao, Dazhi Ding, Junjian Bi, Zhenhong Fan, Rushan Chen

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Abstract

An efficient spectral element method (SEM) with high order basis functions is proposed for the PIN diodes transient simulation based on the nonlinear drift-diffusion model. The backward difference scheme is employed to achieve the unconditional stability with a large time step increment. A PIN diode with quasi one-dimensional structure has been analyzed, and the numerical results have demonstrated the efficiency and accuracy for the proposed method.

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What this paper is about

An efficient spectral element method (SEM) with high order basis functions is proposed for the PIN diodes transient simulation based on the nonlinear drift-diffusion model. The backward difference scheme is employed to achieve the unconditional stability with a large time step increment. A PIN diode with quasi one-dimensional structure has been analyzed, and the numerical results have demonstrated the efficiency and accuracy for the proposed method.

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OpenAlex reports 4 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

An efficient spectral element method (SEM) with high order basis functions is proposed for the PIN diodes transient simulation based on the nonlinear drift-diffusion model. The backward difference scheme is employed to achieve the unconditional stability with a large time step increment. A PIN diode with quasi one-dimensional structure has been analyzed, and the numerical results have demonstrated the efficiency and accuracy for the proposed method.

Key concepts: Diode, Transient (computer programming), PIN diode, Nonlinear system, Diffusion, Stability (learning theory), Basis (linear algebra), Transient analysis

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