Organic,Bistable Devices with AgTCNQ Charge Transfer Complex by Vacuum Co-Deposition

The AgTCNQ thin-film was prepared by vacuum vapor co-deposition and characterized by infrared spectral analysis,and then a uniform AgTCNQ (TCNQ=7,7,8,8-tetracyanoquinodimethane) thin-film layer was sandwiched in a Ti/AgTCNQ/Au crossbar structure array as organic bistable devices (OBD).A reversible and reproducible memory switching property,caused by intermolecular charge transfer (CT) in the AgTCNQ thin-film,was observed in the organic bistable devices.The positive threshold voltage from the high impedance state to the low impedance was about 3.8~5V,with the reverse phenomenon occurring at a negative voltage of -3.5~-4.4V,lower than that with a CuTCNQ active layer.The crossbar array of OBDs with AgTCNQ is promising for nonvolatile organic memory applications.